SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

Name: SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
Brand: Taylor & Francis Inc
SKU: 2183904
Author: USA) Atlanta John D. (Georgia Institute of Technology Cressler

USA) Atlanta John D. (Georgia Institute of Technology Cressler

Taylor & Francis Inc

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Focuses on the materials science aspects of silicon heterostructure. This book defines the various advances in the Si-SiGe strained-layer epitaxy for device applications. It covers modern SiGe epitaxial growth techniques, EPI defects and dopant diffusion in thin films, stability constraints,…

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Výběr knih autora USA) Atlanta John D. (Georgia Institute of Technology Cressler